Power Device Design Engineer

Renesas Electronics

Takasaki, Gunma, Japan

Job Description

・Product design and development of Power devices for Automotive and

Industry use.

・Product in charge : Power devices (IGBT/FRD)

・Main Jobs

Power device product development, Device design, Device simulation

technology , Prototype evaluation, Test development

Qualifications

Requirement:

・ Experience in design, development, and evaluation

of power devices (IGBT, FRD, MOSFET) (more than 3 years)

・ Basic knowledge of power devices (IGBT, FRD, MOSFET)

・ Language Skills: Business level of Japanese & Business Level of English

Nice-to-Have

・ Experience in design, development, and evaluation

of power devices (IGBT, FRD, MOSFET) (more than 5 years)

・ Basic knowledge and experience of device simulation

・ Basic knowledge of markets and applications

・ Basic knowledge of compound semiconductors (SiC, GaN, etc.)

Additional Information

We are planning to expand power device business for automotive and industrial use through new wafer process product development... More Detail

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